Advances in silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) technologies resulted in an impressive increase in high-frequency performance during the last decade …

The heart of SiGe technology is a SiGe heterojunction bipolar transistor (HBT), which offers advantages over both conventional silicon bipolar and silicon CMOS for implementation of …

2002年8月6日 · The combination of SiGe HBT's with advanced Si CMOS to form an SiGe BiCMOS technology represents a unique opportunity for Si-based RF system-on-a-chip …

World wide, SiGe HBT technology went through some very tough time before becoming a successful mainstream analog, RF and mixed-signal technology. At IBM, a world leader in …

Once device-quality SiGe alloys were finally achieved in the mid-1980s, progress was quite rapid. The first functional SiGe HBT was demonstrated in December of 1987, 40 years, nearly to the …

Silicon Germanium:Carbon (SiGe:C) has extended the life of silicon technology for high performance and high speed/ frequency applications. This has been made possible by adding …

2020年3月3日 · With the introduction of epitaxial silicon germanium (SiGe) alloys, that dream has finally become a reality. The SiGe heterojunction bipolar transistor (HBT) is the first practical …

2018年10月10日 · Today, SiGe heterojunction bipolar transistors (HBT) in BiCMOS technology environment are widely used for applications like automotive radar, high-speed wireless and …

discusses the characteristics of a SiGe HBT, and compares how SiGe fares in the worlds of the GaAs HBT and the Si bipolar junction transistors (BJT).

2016年1月11日 · A technology roadmap for the electrical performance of high-speed silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining …