
J3Y Marking, S8050 Datasheet(PDF) - Galaxy Semi-Conductor …
Marking: J3Y. Part #: S8050. Download. File Size: 228Kbytes. Page: 4 Pages. Description: Silicon Epitaxial Planar Transistor. Manufacturer: Galaxy Semi-Conductor Holdings Limited.
Parameter SYMBOLS VALUE UNIT Condition Min. Typ. Max. Collector-base Breakdown Voltage VCBO 40 V Ic= 100 μA, IE=0 Collector-emitter Breakdown Voltage V CEO 25 V I c= 1mA, IB=0 Emitter-base Breakdown Voltage VEBO 5 V I E= 100 μA, IC=0 Collector Cut-off Current I CBO 0.1 µA VCB= 40V, IE=0 Collector Cut-off Current I CEO 0.1 µA VCB= 20V, IE=0 Emitter Cut …
S8050 J3Y(RANGE:200-350) - 立创商城
下载S8050 J3Y (RANGE:200-350)中文资料、引脚图、Datasheet数据手册,有三极管 (BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。
J3Y Marking, J3Y Datasheet, J3Y PDF - Free Datasheets, Silicon ...
Manufacturer: Galaxy Semi-Conductor Holdings Limited. Description: Silicon Epitaxial Planar Transistor. 20 Results.
Transistor S8050: Replacement, pinout, Equivalent and Specs
2022年8月18日 · Let’s look at the pinout of the S8050 in a TO-92 hole-mount package and a SOT-23 hinged package. In the second case it is marked as J3Y. In the figure you can see how the legs of the device in question are arranged in both versions.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A MARKING: J3Y MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit
S8050 J3Y(RANGE:200-350) Jiangsu Changjing ... - LCSC Electronics
S8050 J3Y(RANGE:200-350) Jiangsu Changjing Electronics Technology Co., Ltd. - 25V 300mW 200@500mA,1V 500mA NPN SOT-23 Bipolar (BJT) Bipolar (BJT). Check out the in-stock pricing and datasheet for electronic components from LCSC Electronics.
S8050 Datasheet and Replacement - All Transistors
UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC S8050 is a low voltage high current small signal 1NPN transistor, designed for Class B push-pull audio amplifier TO-92and general purpose applications.
S8050 J3Y NPN SOT-23 SMD 0.5A 40V - Sunrom
Sunrom Electronic components distributor with huge selection in stock and ready to ship same day with no minimum orders. New electronic parts added frequently.
uxcell 100pcs S8050 Transistor J3Y NPN 25V 500mA 300mW …
Order within 19 hrs 11 mins. Only 7 left in stock - order soon. New (2) from$829 FREE Shipping on orders over $35.00 shipped by Amazon. Some of these items ship sooner than the others. Help others learn more about this product by uploading a video! Looking for specific info?
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S8050LT1 Datasheet and Replacement - All Transistors
GSTSS8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch.
S8050 J3Y NPN SOT-23 SMD 0.5A 40V Transistor - ESCLabs
Pb Lead-free Excellent HFE Linearity. High tot al power dissipation. (PC=300mW).
MARKING : J3Y . www.jscj-elec.com AD-S8050* series Version 1.0 2 / 6 2021-07-01 MAXIMUM RATINGS (T j = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector continuous current ...
J3Y Marking, S8050 Datasheet(PDF) - Rectron Semiconductor
Marking: J3Y. Part #: S8050. Download. File Size: 213Kbytes. Page: 3 Pages. Description: Small and medium-sized power amplifier ,medium power drive and switching applications. Manufacturer: Rectron Semiconductor.
S8050 Datasheet (PDF) - Fairchild Semiconductor
Fairchild Semiconductor was a pioneering semiconductor company that was founded in the late 1950s. The company was known for its innovation in the development of the first commercial …
S8050TL Datasheet, Equivalent, Cross Reference Search - All …
SMD Transistor Code: J3Y Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.2 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.5 A Max. Operating Junction Temperature (Tj): 150 °C
MDD(Microdiode Semiconductor) S8050-J3Y - LCSC Electronics
S8050-J3Y MDD (Microdiode Semiconductor) - 25V 300mW 120@500mA,1V 500mA NPN SOT-23 Bipolar (BJT) Bipolar (BJT). Check out the in-stock pricing and datasheet for electronic components from LCSC Electronics.
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S8050
Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet-ers which may be included on RECTRON data sheets and/ or specifications ca-n and do vary in different applications and …
MARKING: J3Y ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V
S8050-J3Y | MDD(Microdiode Semiconductor) | Bipolar (BJT)
S8050-J3Y from MDD (Microdiode Semiconductor) - Bipolar (BJT) is available for JLCPCB assembly, check the stock, pricing and datasheet, and let JLCPCB helps you assemble the part S8050-J3Y for free.