This device is designed for general−purpose high−voltage amplifiers and gas discharge display drivers. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
2N5551(RANGE:100-150) - 立创商城
下载2N5551(RANGE:100-150)中文资料、引脚图、Datasheet数据手册，有三极管(BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。
2N5551 Datasheet(PDF) - ON Semiconductor
Part #: 2N5551. Download. File Size: 188Kbytes. Page: 6 Pages. Description: mplifier Transistors(NPN Silicon). Manufacturer: ON Semiconductor.
2N5551_onsemi(安森美)_2N5551中文资料_PDF手册_价格-立创商城
2N5551由onsemi (安森美)设计生产，立创商城现货销售。 2N5551价格参考￥0.9564。 onsemi (安森美) 2N5551参数名称：晶体管类型：NPN；集电极电流 (Ic)：600mA；集射极击穿电压 (Vceo)：160V；耗散功率 (Pd)：625mW；直流电流增益 (hFE)：80@10mA,5V；特征频率 (fT)：300MHz；集电极截止电流 (Icbo)：50nA；集射极饱和电压 (VCE (sat))：200mV；工作温度：-55℃~+150℃@ (Tj)。 下载2N5551中文资料、引脚图、Datasheet数据手册，有三极管 …
NPN high-voltage transistors 2N5550; 2N5551 FEATURES •Low current (max. 300 mA) •High voltage (max. 160 V). APPLICATIONS •Switching and amplification in high voltage applications such as telephony. DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. PINNING PIN DESCRIPTION 1 ...
2N5551_RUILON(瑞隆源)_2N5551中文资料_PDF手册_价格-立创商城
下载2N5551中文资料、引脚图、Datasheet数据手册，有三极管(BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。
2N5551中文数据手册 - 百度文库
2N5551 晶体管 (NPN) 特性 z 通用开关中的应用 最大额定值 (Ta=25℃ 除非另有说明) 符号 VCBO VCEO VEBO IC PC RθJA Tj Tstg 参数 C-B极间电压 C-E极间电压 E-B极间电压 集电极电流 集电极功耗 Thermal Resistance From Junction To Ambient 结温 存储温度 COLLECTOR POWER DISSIPATION P (mW) C CAPACITANCE C ...
2N5551概述参数_中文资料_引脚图-维库电子市场网
Jan 10, 2025 · 2N5551是一款常见的NPN型双极结型晶体管（BJT），广泛应用于各种电子设备中，用于信号放大和开关作用。 集电极-发射极击穿电压 (Vceo): 最大值为160V。 集电极电流 …
2N5551 Transistor Pinout, Features, Equivalent & Datasheet
Dec 21, 2017 · The 2N5551 is an NPN amplifier Transistor with an amplification factor (hfe) of 80 when the collector current is 10mA. It also has decent switching characteristics (Transition frequency is 100MHz) hence can amplify low-level signals.
2N5551 onsemi | Discrete Semiconductor Products | DigiKey
Order today, ships today. 2N5551 – Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226) from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.