- Chemical vapor deposition (CVD) reactors are used in applications that involve the deposition of a layer or layers of a substance onto a surface.了解详细信息：Chemical vapor deposition (CVD) reactors are used in applications that involve the deposition of a layer or layers of a substance onto a surface.encyclopedia.che.engin.umich.edu/cvd-reactors/A process wherein chemically reactive gases are used to deposit a thin film on a solid substratesites.chemengr.ucsb.edu/~ceweb/courses/che142…
Optimizing chemical vapor deposition reactor design and …
Achieving such thickness in a single-step chemical vapor deposition (CVD) process presents significant challenges due to deposition stability and chamber coating issues. This study addresses these challenges by simulating and optimizing the gas flow field within a …
仅显示来自 sciencedirect.com 的搜索结果Design and modeling of ch…
The performance of chemical vapor deposition (CVD) reactors is strongly …
Computational fluid dynamic…
The design of a new super-atmospheric pressure metal organic chemical vapor …
Chemical vapor deposition - Wikipedia
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desire…Wikipedia · CC-BY-SA 许可下的文字2022年12月2日 · A numerical method for designing chemical vapor deposition (CVD) reactors is proposed, which consists of three steps: extraction of the chemical mechanism and reaction rates using small-scale, well-defined experiments; prototyping a large-scale reactor using
- 作者: Y. K. Chae, Y. Egashira, Y. Shimogaki, K. Sugawara, H. Komiyama
- Publish Year: 1999
CVD Reactors – Visual Encyclopedia of Chemical Engineering …
Design and modeling of chemical vapor deposition reactors
1992年1月1日 · The performance of chemical vapor deposition (CVD) reactors is strongly dependent on fluid flow, heat transport and mass transport. The optimized design of CVD reactors requires an understanding of how these phenomena influence the uniformity in growth rate, composition, and doping.
- 作者: William L. Holstein
- Publish Year: 1992
Computational Analysis and Optimization of a Chemical Vapor …
2004年4月17日 · A computational analysis and optimization is presented for the chemical vapor deposition (CVD) of silicon in a horizontal rotating-disk reactor. A three-dimensional reactor-scale model for the gas flow, heat transfer, and mass transfer in a CVD reactor is coupled to a simple transport-limited surface reaction mechanism for the deposition of ...
Computational fluid dynamics modeling of a new high-pressure …
2021年7月15日 · The design of a new super-atmospheric pressure metal organic chemical vapor deposition (MOCVD) reactor with spatially separated source zones and rotating susceptor is proposed and analyzed using computational fluid dynamics (CFD) techniques to determine fluid transport phenomena and suitability for thin-film synthesis of group III nitrides.
Chemical vapour deposition | Nature Reviews Methods Primers
2021年1月14日 · Horizontal chemical vapour deposition (CVD) and vertical CVD are based on the reactor configurations or the directions of gas flow. The horizontal tube reactor is the most common...
Repeatability and Reproducibility in the Chemical …
2024年1月12日 · Based on our findings, we have shown why it is critical (1) to understand the flow properties inside the reactor and combine it with experimental results to study the growth process for graphene and other 2D films and (2) to …
• Deposition can also take place due to a chemical reaction between some reactants on the substrate. • In this case reactant gases (precursors) are pumped in to a reaction chamber (reactor). • Under the right conditions (T, P), they undergo a reaction at the substrate. • One of the products of the reaction gets deposited on the substrate.
