2023年12月20日 · SiGe BiCMOS. SiGe BiCMOS工艺 集成技术，是在制造电路结构中的双极晶体管时，在硅基区材料中加入一定含量的锗，形成 应变硅异质结构晶体管 ，以改善双极晶体管特性的一种硅基工艺集成技术。SiGe工艺集成技术制造的集成电路具有高速度、低噪声、低功耗等高性 …

SiGe enables Power Amplifiers with high efficiency for high linear output powers and Low Noise Amplifiers with both good noise performance and high linear gain. Published in: 2021 IEEE BiCMOS and Compound Semiconductor Integrated …

2021年1月11日 · The European high performance BiCMOS technology platforms are presented, which have special advantages for addressing applications in the submillimeter-wave and THz range. The status of the technology process is reviewed and …

意法半导体的BiCMOS SiGe（硅锗）技术将射频、模拟和数字部分集成在单颗芯片上，能够大幅减少外部元器件的数量，同时优化功耗。

2018年10月17日 · Abstract: This paper reviews the advantages of SiGe BiCMOS technologies and their applications in the millimeterwave to terahertz domains. The state-of-the-art covering both the Si/SiGe HBTs and the CMOS nodes is shown.

SiGe BiCMOS offers a kind of “sweet-spot” for mm- wave applications due to its combination of RF performance with low cost and adequate levels of integration and quality of passives.

This work reports on the development of SiGe-BiCMOS technologies for mm-wave and THz high frequency applications. We present state-of-the-art performances for different SiGe heterojunction bipolar transistor (SiGe-HBT) developments as well as …

2023年12月16日 · Tower Semiconductor提供面向未来 高频无线通信和高速网络应用进行优化的高性能SiGe BiCMOS技术。 这个行业领先的制造平台包括速度超过325/450GHz Ft/Fmax的晶体管，用于10,100和400GbE数据通信或高频无线应用，如24GHz和77GHz汽车雷达和5G毫米波。

Silicon germanium (SiGe) BiCMOS combines the strengths of two different process technologies into a single chip. Bipolar transistors offer high speed and gain, which are critical for high-frequency analog sections, whereas CMOS technology excels for constructing medium-complexity, low-power logic gates.

The high-performance silicon germanium (SiGe) BiCMOS portfolio from GLOBALFOUNDRIES (GF) is designed to deliver the speed, performance and bandwidth that chips for next-generation hardware require.