11 小时之前 · Additionally, the 80 V transistor in a 3.3x3.3 RQFN package has a typical resistance of 2.3 mΩ. These transistors offer a footprint that, for the first time, allows for easy multi-sourcing strategies and complementary layouts to Silicon-based designs. The new packages in combination with GaN offer a low-resistance connection and low parasitics ...

20 小时之前 · Additionally, the 80 V transistor in a 3.3×3.3 RQFN package has a typical resistance of 2.3 mΩ. These transistors offer a footprint that, for the first time, allows for easy multi-sourcing strategies and complementary layouts to Silicon-based designs. The new packages in combination with GaN offer a low-resistance connection and low ...

8 小时之前 · Additionally, the 80V transistor in a 3.3x3.3 RQFN package has a typical resistance of 2.3mΩ. Picture: CoolGaN G3 Transistor in new silicon-footprint packages. The transistors offer a footprint that, for the first time it is claimed, allows for easy multi-sourcing strategies and complementary layouts to silicon-based designs.

2 天之前 · 2.1 Schematic of the Pulse Power Supply. The schematic of the pulse power supply based on PFN and IGBTs is shown in Fig. 1, which mainly consists of the DC charging power supply, PFN, IGBTs and matching resistor.The maximum pulse width of the output current waveform is determined by the parameters of the PFN, and current waveforms with different pulse widths can be achieved by changing the ...

2 小时之前 · Additionally, the 80 V transistor in a 3.3×3.3 RQFN package has a typical resistance of 2.3 mΩ. These transistors offer a footprint that, for the first time, allows for easy multi-sourcing strategies and complementary layouts to Silicon-based designs. The new packages in combination with GaN offer a low-resistance connection and low ...

9 小时之前 · Additionally, the 80 V transistor in a 3.3x3.3 RQFN package has a typical resistance of 2.3 mΩ. According to Infineon, this chip and package combination allows for high level of robustness in terms of thermal cycling, in addition to improved thermal conductivity, as heat is better distributed and dissipated due to the larger exposed surface ...

20 小时之前 · Additionally, the 80 V transistor in a 3.3×3.3 RQFN package has a typical resistance of 2.3 mΩ. These transistors offer a footprint that, for the first time, allows for easy multi-sourcing strategies and complementary layouts to Silicon-based designs. The new packages in combination with GaN offer a low-resistance connection and low ...

20 小时之前 · Additionally, the 80 V transistor in a 3.3×3.3 RQFN package has a typical resistance of 2.3 mΩ. These transistors offer a footprint that, for the first time, allows for easy multi-sourcing strategies and complementary layouts to Silicon-based designs.

pfn（深圳市普飞诺科技有限公司）半导体 公司於2014年7月份成立，公司产品广泛用于 电源、自动化、通信、计算器、led照明、汽车、消费电子、工业、医疗等等，公司專注于場效應管、二/三極管、三端穩壓器，晶片研發及生產為一體的高新技術企業.

The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.