Indium gallium nitride (InGaN, In x Ga 1−x N) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III / group V direct bandgap semiconductor .

2008年1月1日 · Although InGaN material has long been used as an active material for the fabrication of optoelectronic devices, the emission mechanism still remains an enigma: different models of emission mechanisms have been proposed by different groups.

2025年1月26日 · We believe this review will deepen the understanding of micro-LED sidewall effects and provide a better insight into the latest associated fabrication technologies for high-efficient InGaN...

对于标准的InGaN生长温度，无需相分离即可获得高达0.5的In含量。因此，从理论上讲，只要InGaN层在GaN上施加连续应变，就可以用从均质合金获得发出黄色和红色所需的In含量范围InGaN半导体。但是，任何应变松弛都可能显着降低InGaN合金的稳定性。

2023年7月8日 · InGaN with its direct energy bandgap tunable from 3.4 eV down to 0.7 eV upon increase of the In content is the ideal semiconductor material for light-emitting devices in the huge lighting and display sectors.

2023年5月26日 · This review summarizes the challenges and recent breakthroughs in long-wavelength InGaN light-emitting diodes (LEDs), highlighting the methods to achieve high-indium-composition InGaN epilayers. Diff...

2021年12月15日 · InGaN-based LEDs are efficient light sources in the blue–green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency.

2014年1月21日 · The mixture of gallium nitride (GaN) and indium nitride (InN) to form indium gallium nitride (InGaN) has become one of the more popular technologies for making LEDs, particularly blue and green. Though the technology’s history can be traced back to the 1990s, high-power InGaN technology is much more recent.

1 天前 · Red light-emitting diodes (LEDs) based on InGaN grown on GaN have external quantum efficiency (EQE) limited to a few percent due to several problems, such as low growth temperatures and fairly high compressive strain in the quantum well (QW). Such difficulties can be alleviated if these multiple quantum wells (MQWs) are grown on InGaN templates with In content above 10%. The reduced strain in ...

2022年10月10日 · The dominant peak at 2.23 eV (556 nm) can be attributed to the InGaN QWs on the semipolar plane with a higher indium composition, whereas the peak around 2.36 eV (525 nm) can be attributed to the...