InGaAs is a room-temperature semiconductor with applications in electronics and photonics. The principal importance of GaInAs is its application as a high-speed, high sensitivity photodetector of choice for optical fiber telecommunications.

InGaAs, or indium gallium arsenide, is an alloy of gallium arsenide and indium arsenide. In a more general sense, it belongs to the InGaAsP quaternary system that consists of alloys of indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), and gallium phosphide (GaP).

InGaAs (Indium Gallium Arsenide) is a versatile semiconductor material predominantly used for shortwave infrared (SWIR) detectors. However, the inherent spectral response of standard InGaAs primarily covers wavelengths from approximately 900 nm to 1700 nm.

Indium gallium arsenide (InGaAs) is a compound semiconductor material that is widely used in electronics and photonics applications. It is a ternary alloy made up of indium (In), gallium (Ga), and arsenic (As), and is commonly used as a substitute for silicon in high-speed electronic devices and for certain types of infrared detectors.

2015年2月5日 · This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and...

InGaAs detector arrays are a combination of detector material, which detects the light and turns the photons into electron-hole pairs. The number of electron-hole pairs is measured using a Read Out Integrated Circuit (ROIC).

2024年9月23日 · InGaAs, or indium gallium arsenide, is an alloy of gallium arsenide and indium arsenide. In a more general sense, it belongs to the InGaAsP quaternary system that consists of alloys of indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), and gallium phosphide (GaP).

2023年12月12日 · InGaAs photodetectors are semiconductor devices crafted from indium gallium arsenide, a compound semiconductor renowned for its remarkable optical properties. These photodetectors operate on the principle of photoconductivity, where incident light generates electron-hole pairs within the InGaAs material.

2021年7月15日 · The shortwave infrared imaging technology based on InGaAs sensor has the characteristics: high sensitivity, high resolution, day and night imaging, concealed lighting, no need for low temperature refrigeration, small size and low power.

Indium phosphide (InP) and gallium arsenide (GaAs) are widely used as substrates for electronic and optic devices such as heterojunction bipolar transistors (HBTs), FETs, HEMTs, light emitting diodes (LEDs), etc. InP is a binary semiconductor formed by combining indium and phosphorus which has a face-centered cubic crystal structure, called “zin...