Hafnium oxide is the inorganic compound of the formula HfO2. Also known as hafnia, this colorless solid is one of the most common and stable compounds of hafnium. It is an electrical isolator with a bandgap of 5.3 ~ 5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal.

2022年3月30日 · In this Review, we discuss in depth the properties and origin of ferroelectricity in HfO 2 -based materials, carefully evaluating numerous reports in the field, which are sometimes...

Hafnium oxide (HfO2) | HfO2 | CID 292779 - structure, chemical names, physical and chemical properties, classification, patents, literature, biological activities, safety/hazards/toxicity information, supplier lists, and more.

Hafnium oxide (HfO 2) is one of the mature high-k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices.

HfO2 is Baddeleyite structured and crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. Hf4+ is bonded to seven O2- atoms to form a mixture of distorted corner and edge-sharing HfO7 pentagonal bipyramids.

2019年1月1日 · Understanding the mechanisms underpinning these functionalities requires a basic understanding of the HfO2 crystal structures and HfO 2-metal oxide phase equilibria. This chapter reviews these fundamentals, including a discussion on the role of dopants and phase stability of doped HfO2.

2024年8月23日 · In this review, we provide an in-depth discussion of the computational efforts to understand ferroelectric hafnia, comparing various metastable polar phases and examining the critical factors...

2022年6月27日 · Ferroelectric HfO2-based materials hold great potential for the widespread integration of ferroelectricity into modern electronics due to their compatibility with existing Si technology.

2025年1月22日 · Hafnium oxide (HfO2), particularly at low-dimensional scales, exhibits extensive promising applications in ultrahigh density devices like low-power logic and non-volatile memory devices due to its compatibility with current semiconductor technology1-5.

2025年2月18日 · Combining group theory and first-principles calculations, we identify numerous unconventional electric polarization switching pathways in HfO 2 with energy barriers of 0.32 to 0.57 eV as a function of the different shift in the suboxygen lattices.