Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN …
Mar 1, 2019 · The AlN/GaN and AlN/AlGaN/AlN thin film was successfully prepared via plasma-assisted molecular beam epitaxy (MBE) technique on silicon substrate. The structural and …
High performance of AlGaN/GaN HEMT with AlN cap layer
Feb 1, 2025 · In this study, GaN high electron mobility transistors (HEMTs) with a 2 nm AlN cap layer (AC-HEMTs) were fabricated on SiC substrate. The AlN/AlGaN/AlN/GaN …
operation at high Pout, thermal management in GaN HEMTs must be improved. We present AlN/GaN/AlN HEMTs, where an AlN buffer layer is homoepitaxially grown on bulk AlN …
Thermophysical property measurement of GaN/SiC, GaN/AlN, and AlN…
Mar 6, 2025 · Recently, there has been a momentum on incorporating AlN into the GaN HEMT structure to achieve enhanced electrical performance, as shown in Fig. 1(b).For instance, this …
Improved p-GaN/AlGaN/GaN HEMTs with magnetronsputtered AlN …
Feb 15, 2025 · Low-temperature preparation of AlN enhances the threshold voltage and drain breakdown characteristics of p-GaN HEMTs and has good potential for preparing p-GaN …
GaN & AlN - Fraunhofer Institute for Integrated Systems and …
We pioneer the PVT growth of AlN crystals by using our unique N-face technology. The focus is on deeper understanding of growth mechanisms and upscaling towards 2” diameter. In our …
Thermal characterization and design of AlN/GaN/AlN HEMTs on …
Mar 6, 2025 · Abstract: AlN/GaN/AlN high electron mobility transistors (HEMTs) offer enhanced carrier confinement and higher breakdown voltage than conventional AlGaN/GaN HEMTs. In …
TCAD-Based Analysis on the Impact of AlN Interlayer in Normally …
Jan 14, 2025 · In GaN HEMTs, incorporating an Aluminum Nitride (AlN) layer has been reported to offer numerous advantages. In the work by [ 38 ], AlN was used to enhance device reliability …
Thermal boundary conductance in standalone and non-standalone GaN/AlN …
Mar 7, 2025 · GaN/AlN interfaces are essential in advanced high-power and high-frequency electronic devices, where effective thermal management is crucial for optimal performance …
Realization of Controllable Growth of N-Polarity GaN Films on SiC ...
Mar 5, 2025 · Moreover, we propose a growth model of the N-polarity GaN film grown on the AlN buffer layer and analyze the mechanism by which the nucleation of AlN buffer layer affects the …