2019年3月1日 · The AlN/GaN and AlN/AlGaN/AlN thin film was successfully prepared via plasma-assisted molecular beam epitaxy (MBE) technique on silicon substrate. The structural and optical properties of the AlN/GaN and AlN/AlGaN/AlN heterostructures have been analyzed using XRD, AFM, PL, and Raman.

2025年2月1日 · In this study, GaN high electron mobility transistors (HEMTs) with a 2 nm AlN cap layer (AC-HEMTs) were fabricated on SiC substrate. The AlN/AlGaN/AlN/GaN heterostructures feature smooth surface and low sheet resistivity.

operation at high Pout, thermal management in GaN HEMTs must be improved. We present AlN/GaN/AlN HEMTs, where an AlN buffer layer is homoepitaxially grown on bulk AlN substrates. In this heterostructure, AlN simultaneously offers an ultra-wide energy bandgap (~6.1 eV) and high thermal conductivity (340 W/m·K) [1]; the

2025年3月6日 · Recently, there has been a momentum on incorporating AlN into the GaN HEMT structure to achieve enhanced electrical performance, as shown in Fig. 1(b).For instance, this AlN/GaN/AlN platform employs a strained GaN quantum well sandwiched between AlN barrier and buffer layers, where the large bandgap energy difference results in effective electron …

2025年2月15日 · Low-temperature preparation of AlN enhances the threshold voltage and drain breakdown characteristics of p-GaN HEMTs and has good potential for preparing p-GaN HEMT power devices. The conduction band offset of p-GaN and AlN was analyzed by XPS test, and the gate leakage current suppression mechanism was clarified.

We pioneer the PVT growth of AlN crystals by using our unique N-face technology. The focus is on deeper understanding of growth mechanisms and upscaling towards 2” diameter. In our wafering line we explore advanced GaN and AlN crystal preparation technologies for …

2025年3月6日 · Abstract: AlN/GaN/AlN high electron mobility transistors (HEMTs) offer enhanced carrier confinement and higher breakdown voltage than conventional AlGaN/GaN HEMTs. In this work, Raman thermometry was used to characterize the self-heating behavior of a single-finger AlN/GaN/AlN HEMT on 6H-SiC. A 3D finite element analysis model was created to optimize …

2025年1月14日 · In GaN HEMTs, incorporating an Aluminum Nitride (AlN) layer has been reported to offer numerous advantages. In the work by [ 38 ], AlN was used to enhance device reliability and reduce gate leakage by forming double …

2025年3月7日 · GaN/AlN interfaces are essential in advanced high-power and high-frequency electronic devices, where effective thermal management is crucial for optimal performance and reliability. This work investigates the thermal boundary conductance (TBC) of standalone and non-standalone GaN/AlN heterostructures using non-equilibrium molecular dynamics (NEMD) …

2025年3月5日 · Moreover, we propose a growth model of the N-polarity GaN film grown on the AlN buffer layer and analyze the mechanism by which the nucleation of AlN buffer layer affects the structural property of the N-polarity GaN film. This work presents a method for obtaining high-quality N-polarity GaN films on SiC substrates, which is beneficial for ...