NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD Document No. PU10211EJ01V0DS (1st edition) (Previous No. P10357EJ4V1DS00) Date Published January 2003 CP(K) The mark ’’’’ shows major revised points. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = …
2SC3357 Datasheet(PDF) - NEC
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES
2SC3357 EVVO | Discrete Semiconductor Products | DigiKey
Order today, ships today. 2SC3357 – RF Transistor NPN 12V 100mA 6.5GHz 1.2W Surface Mount SOT-89 from EVVO. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
2SC3357 Datasheet and Replacement - All Transistors
2SC3357 Transistor Datasheet pdf, 2SC3357 Equivalent. Parameters and Characteristics
NE85634, 2SC3357 Datasheet by CEL - Digi-Key Electronics
View NE85634, 2SC3357 by CEL datasheet for technical specifications, dimensions and more at DigiKey.
2SC3357-T1-A CEL | Mouser - Mouser Electronics
2025年3月6日 · 2SC3357-T1-A CEL RF Bipolar Transistors NPN High Frequency datasheet, inventory, & pricing.
2SC3357 NPN Transistors Features Low noise and high gain High power gain Large Ptot 1 2 3 Simplified outline(SOT-89) 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 mA