Indium gallium nitride - Wikipedia
Indium gallium nitride (InGaN, In x Ga 1−x N) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III / group V direct bandgap semiconductor .
InGaN: An overview of the growth kinetics, physical properties and ...
2008年1月1日 · Although InGaN material has long been used as an active material for the fabrication of optoelectronic devices, the emission mechanism still remains an enigma: different models of emission mechanisms have been proposed by different groups.
Advanced technologies in InGaN micro-LED fabrication to …
2025年1月26日 · We believe this review will deepen the understanding of micro-LED sidewall effects and provide a better insight into the latest associated fabrication technologies for high-efficient InGaN...
Recent Progress in Long‐Wavelength InGaN Light‐Emitting …
2023年5月26日 · This review summarizes the challenges and recent breakthroughs in long-wavelength InGaN light-emitting diodes (LEDs), highlighting the methods to achieve high-indium-composition InGaN epilayers. Diff...
In Desorption in InGaN Nanowire Growth on Si Generates a …
2023年7月8日 · InGaN with its direct energy bandgap tunable from 3.4 eV down to 0.7 eV upon increase of the In content is the ideal semiconductor material for light-emitting devices in the huge lighting and display sectors.
N-polar GaN: Epitaxy, properties, and device applications
2023年1月1日 · The InGaN alloy system is attractive for a variety of optoelectronic applications, including light-emitting diodes (LEDs) [3, 4, 104], laser diodes (LDs) [9, 10, 105], photovoltaic applications [[106], [107], [108], [109]] and photo-detectors [110, 111], as it enables direct bandgap tuning within a large range (0.7 eV–3.4 eV).
InGaN Platelets: Synthesis and Applications toward Green and Red …
In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer platelets with a top c-plane area having an extension of a few hundred nanometers by selective area metal–organic vapor-phase epitaxy.
Highly efficient blue InGaN nanoscale light-emitting diodes
2022年8月3日 · Using a sol–gel passivation method, the fabrication of blue InGaN nanorod-LEDs with the highest external quantum efficiency value ever reported for LEDs in the nanoscale is demonstrated.
InGaN micro-light-emitting diodes monolithically grown on Si: …
2022年10月10日 · The dominant peak at 2.23 eV (556 nm) can be attributed to the InGaN QWs on the semipolar plane with a higher indium composition, whereas the peak around 2.36 eV (525 nm) can be attributed to the...
窒化インジウムガリウム - Wikipedia
窒化インジウムガリウム（ちっかインジウムガリウム）はインジウムとガリウムの窒化物であり、三元化合物で組成式はInGaNである。 化合物 半導体 であるため、その性質を利用して 半導体素子 の材料として多用されている。