Description: N - CHANNEL 50V - 0.03W - 33A TO-220 STripFET] MOSFET. Manufacturer: STMicroelectronics.

这是一款 N 沟道增强型硅门极功率 MOSFET，适用于开关调节器、开关转换器、电机驱动器、继电器驱动器以及需要高速、低门极驱动功率的高功率双极开关晶体管驱动器。 此型号可直接以集成电路运行。 之前的研发型号为 TA9771。 BUZ11-NR4941由onsemi (安森美)设计生产，立创商城现货销售。 BUZ11-NR4941价格参考￥5.48。 onsemi (安森美) BUZ11-NR4941参数名称：类型：1个N沟道；漏源电压 (Vdss)：50V；连续漏极电流 (Id)：30A；耗散功率 (Pd)：75W；阈值 …

BUZ11/D BUZ11 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

2022年7月10日 · BUZ11 is a widely used N Channel MOSFET available in TO-220AB package capable to drive continuous load of up to 30A. It is primarily designed for applications such as high-speed switching, high current switching, switching regulators, DC to AC and DC to DC conversion circuitry, relay driver, high-power audio amplifiers, and motor drivers.

This is an N-Channel enhancement mode silicon gate power MOSFET designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.Formerly develop...

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

View datasheets for BUZ11 by ON Semiconductor and other related components here.

2025年3月11日 · BUZ11 STMicroelectronics MOSFETs TO-220 N-CH 50V 33A datasheet, inventory, & pricing.

Description: N - CHANNEL 50V - 0.045W - 26A TO-220 STripFET] MOSFET. Manufacturer: STMicroelectronics.

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.