2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix www.vishay.com 11-4 Document Number: 70226 S-04279— Rev. F, 16-Jul-01 ˇ ˘ ˇ ˆ ˙
2N2700 Datasheet - Specifications, Features, and Application
The 2n2700 transistor boasts excellent switching speed, making it ideal for applications that demand quick and precise responses. With its ability to swiftly transition between ON and OFF states, this transistor enables efficient signal processing and …
2N2700 MOTOROLA Integrated Circuits (ICs) - Jotrin Electronics
The 2N2700 parts manufactured by MOTOROLA are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers.
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This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Table 1.
2N2700 Datasheet, PDF - Alldatasheet
Description: GE PNP LO-PWR BJT. 4 Results. Datasheet: 2MbKb/6P. Manufacturer: List of Unclassifed Manufacturers.
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These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance.
2N7000_CJ (江苏长电/长晶)_2N7000中文资料_PDF手册_价格-立创 …
下载2N7000中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。
2N2700 MOTOROLA 集積回路（IC） - Jotrin Electronics
The 2N2700 parts manufactured by MOTOROLA are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The 2N2700 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.
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2N7002E www.onsemi.com 3 TYPICAL CHARACTERISTICS Figure 1. On−Region Characteristics Figure 2.Transfer Characteristics VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) 0 2 4 6 0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 0 0.4 0.8 1.2 Figure 3. On−Resistance vs. Drain Current and Temperature