2018年1月11日 · Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap.

2023年9月1日 · We develop two types of machine-learning Gaussian approximation potentials (ML-GAPs) for Ga2O3 with high accuracy for β/κ/α/δ/γ polymorphs and generality for disordered stoichiometric structures.

In this review, the monoclinic structured β-Ga 2 O 3 polymorph will be mainly focused on and stated in detail, including the fabrication, properties, and applications.

2021年5月7日 · Gallium (III)oxide | Ga2O3 | CID 5139834 - structure, chemical names, physical and chemical properties, classification, patents, literature, biological activities, safety/hazards/toxicity information, supplier lists, and more.

Gallium oxide | Ga2O3 | CID 158605 - structure, chemical names, physical and chemical properties, classification, patents, literature, biological activities, safety/hazards/toxicity information, supplier lists, and more.

2024年10月22日 · Gallium oxide (Ga 2 O 3) materials can be fabricated via various methods or processes. It is often mentioned that it possesses different polymorphs (α-, β-, γ-, δ- and ε-Ga 2 O 3) and excellent physical and chemical properties.

2018年9月19日 · Gallium oxide (Ga 2 O 3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD).

2022年1月17日 · In this review, after introducing material properties of β -Ga 2 O 3 that are important for electronic devices, current status of bulk melt growth, epitaxial thin-film growth, and device processing technologies are introduced.

Gallium oxide is a type of semiconductor. It is inorganic compound expressed as Ga 2 O 3, with a component ratio of gallium (Ga) to oxygen (O) of 2:3. It has a distorted cubic, close-packed array, and consists of a distorted tetrahedral or octahedral structure.

2023年11月10日 · Gallium oxide (Ga 2 O 3) possesses an ultra-wide bandgap ranging from 4.5 eV to 5.16 eV, as well as a high critical breakdown electrical field of 8 MV/cm. These values surpass those of other commonly used semiconductor materials such as silicon (Si), silicon carbide (SiC), and gallium nitride (GaN).