2011年12月30日 · We have investigated the atomic layer deposition (ALD) on SiO 2 and III-V (i.e., In 0.53 Ga 0.47 As) substrates of Al-doped ZrO 2 (Al-ZrO 2) films. The aim is to benefit from trimethylaluminum-based chemistry as adopted in the ALD of Al 2 O 3 while concomitantly obtaining an improvement in the value of the dielectric constant of the gate stack.

2024年11月6日 · This study investigates the morphology and composition of hydrides in Optimized ZIRLO following electrochemical deuterium charging. Both ZrO and ZrD x phases were formed upon charging. The interfaces between these phases are investigated by using atom probe tomography aided by cryogenic sample transfer.

Al-doped ZrO2 (Al-ZrO2) films deposited by atomic layer deposition onto silicon substrates and the interface with the TaN metal gate are investigated. In particular, structural properties of...

1992年6月1日 · Journal of Phase Equilibria - G. Brauer,“Crystal Structure of Intermetallic Alloys of Aluminium with Titanium, Zirconium, Thorium, Niobium and Tantalum,”Naturwissenschaften, 26,710 (1938) in German.(Crys Structure; Experimental)

2014年7月15日 · A new hybrid chelating ion exchanger zirconium diethylene triamine (ZrD) has been synthesized by a simple sol–gel route using inexpensive and easily available chemicals. ZrD has been characterized for elemental analysis (ICP-AES, CHN analysis), TGA, FTIR, X-ray diffraction, SEM and EDX.

ALD HfO2- and ZrO2-based ferroelectrics enable novel‚ CMOS-compatible devices for both logic and memory1. Although the most stable bulk crystal structure of these materials is a monoclinic phase‚ this phase does not support ferroelectricity.

2016年3月15日 · The results showed that the peritectoid reaction α-Zr + δ-ZrD → γ-ZrD previously suggested to occur at high temperatures does not take place in the system. Slow cooling, from high temperatures (≥520 K) to room temperature at a rate of 5 K min −1, promoted the γ-hydride formation rather than fast cooling as reported earlier. In ...

HfD-04 and ZrD-04 show linear ALD growth with both and ozone. There is strong monoclinic suppression in ZrO2 films with ozone at 300°C (extending results from A. Lamperti‚ Lamagna‚ G. Congedo‚ and S. Spiga‚ J. Electrochem. G221, 2011). …

2016年1月6日 · Various methods for depositing thin layers of deuterides (hydrides) TiD 2 (TiH 2), ZrD 2 (ZrH 2), NbD (NbH), and CrD 2 (CrH 2) on stainless steel, copper, and silicon substrates are described. The method for magnetron sputtering of nanolayers of these deuterides (hydrides) with various textures is considered.

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