Advances in silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) technologies resulted in an impressive increase in high-frequency performance during the last decade extending the addressed application frequencies into the mm- and sub-mm-wave bands.

2002年8月6日 · The combination of SiGe HBT's with advanced Si CMOS to form an SiGe BiCMOS technology represents a unique opportunity for Si-based RF system-on-a-chip solutions. This paper reviews state-of-the-art SiGe HBT technology and assesses its potential for current and future RF and microwave systems.

2018年10月10日 · Today, SiGe heterojunction bipolar transistors (HBT) in BiCMOS technology environment are widely used for applications like automotive radar, high-speed wireless and optical data links, and high-precision analog circuits.

2021年12月8日 · SiGe HBTs (heterojunction bipolar transistors) are a type of Si-based BJTs (bipolar junction transistors) that employ a SiGe alloy layer as a part of the device, typically as the base layer.

The first functional SiGe HBT was demonstrated in December of 1987, 40 years, nearly to the day, after the first transistor. That pioneering result showed a SiGe HBT with functional, albeit leaky, DC I-V characteristics; but it was a SiGe HBT, it worked, and it was the first. It is an often-overlooked historical point, however, that at least

2016年1月11日 · A technology roadmap for the electrical performance of high-speed silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining the results of various 1-D, 2-D, and 3-D technology computer-aided design (TCAD) simulation tools with geometry scalable compact modeling.

2020年3月3日 · With the introduction of epitaxial silicon germanium (SiGe) alloys, that dream has finally become a reality. The SiGe heterojunction bipolar transistor (HBT) is the first practical bandgap-engineered device to be realized in the silicon material system.

Abstract: Improvements in high-speed performance, impurity-profile engineering, and technology trends in SiGe HBTs and BiCMOS devices are briefly reviewed. Advances in self-aligned SiGe HBT structures associated with a thin base have significantly raised cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ to more than 200 GHz.

2004年1月1日 · Integrated SiGe chips can be found in both the RF and IF functions of GSM and CDMA wireless handsets and base stations, wireless LAN chipsets, high-speed 10--40 Gb/s synchronous optical network (SONET) transceivers, and 1-2.5 Gb/s Ethernet ICs.

devoted to technology and gives an overview of SiGe HBT development and BiCMOS process integration at the Euro-pean level. Section III is dedicated to mmW characteriza-tion and modeling. Power measurement up to 190 GHz and NF-measurement up to 325 GHz are addressed as well as S-parameter measurements up to 500 GHz. The harmonic