2018年2月22日 · Here we employ photoelectron spectroscopy to map the relevant bands for metastable, epitaxial GeSbTe films. The constant energy surfaces of the valence band close to the Fermi level are hexagonal...

2016年12月20日 · Gas-phase condensation based on magnetron sputtering offers an attractive and straightforward solution to continuously down-scale the PCMs into sub-lithographic sizes.

2016年5月3日 · However, the distribution and structural properties of vacancies have been one of the key issues in determining the speed of melting (or amorphization), phase-stability and heat-dissipation of...

Although there have been many promising binary and ternary alloys with phase switching properties, by far the most studied and integrated phase change materials are the Ge-Sb-Te alloys, specifically Ge 2 Sb 2 Te 5 or GST225.

Among the phase-change materials, Ge-rich GeSbTe (GST) alloys are of considerable interest as they offer a much higher thermal stability than their congruent contenders, a desirable characteristic for embedded digital memories and neuromorphic devices.

Therefore, we present here an innovative exploration of the crystallization kinetics of Ge 2 Sb 2 Te 5 (GST) nanoparticles (NPs) exploiting differential scanning calorimetry with ultrafast heating up to 40 000 K s –1.

2012年10月1日 · Discovery of the GeSbTe phase-change alloy in particular along the GeTe–Sb 2 Te 3 tie-line took place in the mid-1980s. The amorphous alloys showed ideal properties, for example, high thermal stability at r.t. and laser-induced rapid …

2022年2月14日 · In this paper, we have studied the stability and the electrical properties of Ge-rich GeSbTe alloys belonging to the Ge-Sb 2 Te 3 and Ge-Ge 2 Sb 2 Te 5 lines. The Ge-rich GST225 film with Ge amount lower than 40 at % has a crystallization temperature of 180 °C and exhibits no phase separation.

2020年11月1日 · We then introduce current developments in both GST-metal hybrid metamaterials and GST-based dielectric metamaterials, and investigate the strategy of designing reversibly switchable GST-based photonic devices and their advantages.

Fully characterize the highly absorbing GeSbTe film by measuring multiple-angle reflection and ellipsometric data from the deep UV through the near IR. Superior film characterization enables accurate and repeatable process monitoring.