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eeworld.com.cn
29 天
消息称三星电子完成 4XX 层 NAND 闪存技术开发,开始向量产线转移
2007年5月29日,意法半导体(ST)公司副总裁兼大中国区总经理Bob Krysiak详细揭秘了与英特尔合资成立新闪存公司的始末。此时,距离这一消息正式宣布,恰好过去一周时间。 “在闪存领域,要想成功需要有大规模的量产和制造能力,然而,在过去的两年里 ...
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