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Abstract: Embedded packaging of wide bandgap ... despite the maximum von Mises stress of silicon-nitride (Si3N4) is the highest compared to its substrate counterparts, the obtained maximum stress is ...

Chinese silicon carbide (SiC) substrate manufacturers are facing mounting pressures as quality issues and a looming US trade investigation threaten their market ...

Meanwhile, China is projected to quadruple its silicon carbide substrate production capacity over the next two years, maintaining a rapid expansion pace. Bharat Kapoor, partner and global lead at ...

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AEHR was trading -20.45% pre-market at $12.72. "Based on recent market forecasts, growth in silicon carbide sales outside of China should remain challenging before recovering in calendar 2026 ...

Silicon carbide technology is revolutionizing the power electronics industry, enabling higher efficiency, compact designs, and better thermal performance across various applications. With over twenty ...

Bhubaneswar: RIR Power Electronics Limited will establish India’s first silicon carbide (SiC) semiconductor manufacturing facility in Odisha ... manufacturing capabilities with high-value processes ...

Recent research has focused on optimizing the growth of heterostructures using hybrid substrates that incorporate both porous silicon and silicon carbide (SiC), which enhances the structural and ...

For high-power applications such as EV powertrains, e-Mobility, renewable energy systems, battery energy storage systems, and artificial intelligence data centers – that unlock enhanced performance ...