Typical gate-drain charge is 37nC (400Vd, 10Vg, 80A) and total gate charge (gate-source + gate-drain) is 140nC. Reverse recovery for the intrinsic diode is 8.5µC and 425ns, both at 400V, 40A, 100A/µs ...

What are the best Baldur’s Gate 3 mods? The modding community working on Larian games has a storied history regarding DOS and Baldur’s Gate, and the BG3 community is no different thanks to ...

During faults, the Stage 1 current limiting control instantly clamps the inverter output current magnitude to its maximum transient limit by blocking the switching pulses to the insulated-gate bipolar ...

In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, ROHM plans to ensure the rapid introduction of automotive-grade GaN devices by ...

ROHM has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with ...

The GD3162 gate driver is designed to drive the latest high-voltage SiC and IGBT modules for xEV traction inverters. The device allows higher-performance traction inverters to extend the range in EVs, ...