近日，埃特曼半导体技术有限公司的一项重要专利申请引发广泛关注。据国家知识产权局信息显示，该公司申请的'一种N极性AlN/GaN外延结构及其制备方法'专利正式获批，公开号为CN119653801A。这一突破性技术不仅为氮化镓材料的产业化应用提供了新的解 ...

Abstract: AlN/GaN/AlN high electron mobility transistors (HEMTs) offer enhanced carrier confinement and higher breakdown voltage than conventional AlGaN/GaN HEMTs. In this work, Raman thermometry was ...

Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...

近日，金融界报道称，埃特曼半导体技术有限公司在国家知识产权局提出了一项引人注目的新专利，名为“一种N极性AlN/GaN ...

State Key Laboratory of Integrated Optoelectronics, JLU Region, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China ...

Researchers demonstrate scalable integration of graphene and GaN devices using van der Waals forces, enabling high-performance CMOS-compatible electronics.

As the growth in global electricity need and supply continues to accelerate, efficient power electronics will be key to ...

Use precise geolocation data and actively scan device characteristics for identification. This is done to store and access ...

The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...