The patent, expected to be issued soon, protects a revolutionary method for laser bonding bioactive silicon nitride to various biomedical implant substrates, including titanium, alumina ...

Electronics designers are moving away from conventional Si-based power electronics and towards wide-bandgap solutions.

Toyoda Gosei’s (TOKYO:7282) technology to enhance GaN substrates has been verified to improve power device performance. An ...

It is employed for depositing photoresists, dielectric layers (e.g., silicon dioxide, silicon nitride), and conductive polymers (e.g., PEDOT:PSS) onto silicon wafers or other substrates. The precise ...

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Switching material from silicon to gallium nitride enables 90% energy-saving, superior devices, for which mass production of larger quality GaN substrates is requisite. The Japanese Ministry of ...