Silicon power electronic devices such as IGBTs and MOSFETs can also be controlled via the gate. Here less speed is required, e.g. 120 MHz arbitrary waveform generation is adequate. Therefore, it can ...

IGBT（Insulated Gate Bipolar Transistor）全称是“绝缘栅双极型晶体管”，在新能源大功率电力电子设备中发挥着关键作用，兼具有MOSFET的高输入阻抗和GTR的 ...

Infineon expanded its EiceDRIVER family with new isolated gate-driver ICs designed for electric vehicles. The parts support the latest IGBT and SiC technologies, including the HybridPACK Drive G2 ...