EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power.

However, over the past year, I have undertaken extensive testing, evaluating close to 300 GaN (gallium nitride) chargers of varying sizes, power outputs, and manufacturers. Also: This portable ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...

Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package. With dimensions of 11.68×9.9×2.4 mm, this compact package enhances heat dissipation, ...