近日，埃特曼半导体技术有限公司的一项重要专利申请引发广泛关注。据国家知识产权局信息显示，该公司申请的'一种N极性AlN/GaN外延结构及其制备方法'专利正式获批，公开号为CN119653801A。这一突破性技术不仅为氮化镓材料的产业化应用提供了新的解 ...

With the recent announcement by Infineon that GaN use is reaching the “tipping point” for accelerated adoption, maybe it’s ...

Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...

As the growth in global electricity need and supply continues to accelerate, efficient power electronics will be key to ...

Aluminum nitride (AlN) has an even wider bandgap of ... Raytheon already has plenty of experience in integrating GaN and GaAs ...