The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...
As the growth in global electricity need and supply continues to accelerate, efficient power electronics will be key to ...
Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...
tom's Hardware on MSN5mon
U.S. DARPA responds to China's gallium export controls: awards Raytheon three-year contract to develop new types of transistorsAluminum nitride (AlN) has an even wider bandgap of ... Raytheon already has plenty of experience in integrating GaN and GaAs ...
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