来自MSN3 个月
为埃米时代开始准备， imec提出双列CFET结构推动7埃米制程
Imec表示，目前半导体业在制造 （单片） CFET组件方面持续获得重大进展，这些组件预计会在逻辑技术的发展历程中接替环绕闸极 （GAA） 纳米片架构。
来自MSN3 个月
Intel制程和封装4大突破：封装吞吐量提升100倍
为了在CFET（互补场效应晶体管）之外进一步加速GAA技术创新，Intel代工展示了在2D GAA NMOS（N 型金属氧化物半导体）和PMOS（P 型金属氧化物半导体 ...
Semiconductor Engineering3 年
Transistors Reach Tipping Point At 3nm
GAA FETs provides greater performance at lower power than finFETs ... in a paper at IEDM. Recently, Intel presented a paper on a CFET with 13nm wide sheets and 9nm spacing between each one. “The ...
Semiconductor Engineering23 天
Material Properties of Si/SiGe Multi-layer Stacks For CFETs (Imec, Ghent U, et al.)
A new technical paper titled “Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices” was published by researchers at Imec and Ghent University, et al. “After a short ...