First, because EUV light is absorbed by air (in contrast with 193 nm light), the entire optical system, from source to wafer, must be enclosed in a near-vacuum environment. Second, because EUV ...

The project will test the BAT laser’s ability to increase EUV source efficiency by about 10 times compared with carbon dioxide lasers, the current industry standard. This could lead to a next ...

Russia has unveiled a roadmap to develop its own lithography machines, aiming to create less costly and complex equipment than ASML's systems, according to CNews. These machines will use lasers ...

Light source is among the most complex part of any extreme ultraviolet (EUV) lithography tools. Neither ASML nor Intel disclose maximum performance (wattage) of Twinscan EXE's light source.

High-NA EUV lithography makes it possible to form fine patterns on silicon wafers with a higher resolution than previously possible, and is expected to lead to the realization of high-performance ...